Metal-Coordination ALD Precursors
■ Features
▶ At the nanoscale, ruthenium(Ru)has lower resistivity than copper(Cu), making it a strong
candidate to replace Cu interconnects in advanced technology nodes.
▶ Ru interconnects do not readily diffuse within film stacks, eliminating the need for a
diffusion-barrier layer.
▶ We developed a series of Ru ALD precursors compatible with ALD tools for thin-film
deposition.
▶ A coordinated molecular structure was designed; ligand-modification techniques stabilize
the ligand environment.
▶ By balancing molecular weight and steric hindrance, we obtained a low-boiling-point,
low-vaporization-temperature Ru ALD precursor; a Taiwan patent has been granted.
■ Electrical Properties Comparison
■ Applications Platforms
■ Applications
▶ Advanced semiconductor processes.
▶ optoelectronic materials.
ALD Thin-Film Deposition
■ Innovations
▶ With continued semiconductor miniaturization, ALD becomes increasingly critical for depositing
highly uniform nanometer-scale films on high-aspect-ratio structures.
▶ Materials used in mature nodes face challenges at advanced nodes; precursor synthesis is
dominated by foreign vendors, widening the gap for domestic suppliers.
▶ We develop ALD precursor synthesis and deposition technologies for sub-5-nm metals,
passivation layers, high-k dielectrics, high-mobility films, and TGV process films.
▶ Beyond materials, we leverage plasma-enhanced ALD(PEALD)equipment to enable
low-temperature processes.
▶ On high-aspect-ratio substrates,Al2O3, AlN, and SiN films deliver moisture/oxygen barrier
encapsulation performance.
■ Industry Impact
By 2025 the ALD precursor market is about USD 1.9B with a 9% CAGR; precursors for high-k
films and high-aspect-ratio substrates are the fastest-growing segments; building domestic ALD
precursor synthesis capability is strategic.
■ Applications
Semiconductor Components: Moisture/oxygen barrier layers for semiconductor and optoelectronic
devices(Al2O3, AlN, GaN, SiO2, SiN); high-electron-mobility films(MOx,etc.)
■ Contact Us
Material and Chemical Research Laboratories
Dept. of Metal-Organic Materials Synthesis
and Advanced-Deposition Process(L500)
Yong-Jay Lee
Tel:03-5912945
E-mail:bryanyjlee@itri.org.tw